Double-active-layer index-guided InGaAsP-InP laser diode
نویسندگان
چکیده
منابع مشابه
Double-Active-Layer Index-Guided InGaAsP-InP Laser Diode
A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature behavior of the doublecarrier-confinement structure. An anomalously high-characteristic temperature To was measured and an optical switching behavior was observed. A model analysis and numerical calculation using a rate equation approach explained qualitatively very well the experimental results. ...
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The temperature kinetics of InGaAsP/InP high-power laser diode arrays with different fill factors was studied experimentally and theoretically. It was shown that except during a short initial period, the laser array heating is determined by the heat flux propagation through the heat spreader. To characterize this heating, we developed a two-dimensional analytical model. Experimentally, the temp...
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ژورنال
عنوان ژورنال: IEEE Journal of Quantum Electronics
سال: 1990
ISSN: 0018-9197
DOI: 10.1109/3.62108